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Single crystal diamond
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Thickness of diamond layer:
h (Dia) 0,3 mm
Roughness:
Ra 1 µm
Thickness of silicon substrate:
h (Si) 0,6 mm
Diameter:
d 76 mm
Diamond plates are used as heat sinks in high-power semiconductor devices
Characteristics
/ 07
Polycrystalline plate on silicon
growth in performance relative to current peak values for satellite, terrestrial communications and radar equipment
<10%
Optoelectronics, laser diodes and LED matrix
Lighting
Inverters, power supplies for equipment and electric vehicles, servers
Power electronics
5G radio modules, radars, navigation systems, satellite and terrestrial communications
Microwave electronics
Advantages
Applications
Order
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Polycrystalline plate on silicon
d 76 mm
h (Si) 0,6 mm
h (Dia) 0,3 mm
Ra 1 µm
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